Electronics

HEMT/InP HEMP/GaN HEMT

HEMT stands for High Electron Mobility Transistor. Due to this High Electron Mobility characteristics, it can offer a great performance in very high frequency application like microwave and mmWave area.

Most popular form of HEMT are InP HEMT and GaN HEMT.

InP HEMT

InP HEMT shows excellent performance in terms of low noise and high sensitivity in microwave area.

GaN HEMT

GaN HEMT can be used both in optical and electrical applications.

In optical applications, it mostly work at a wavelength in the near ultra violet region of the optical spectrum. This enables the fabrication of high-power optical devices as LEDs and Lasers.

In electrical applications, it is an excellent option for high-power/high-temperature microwave applications because of its high electric breakdown field and high electron saturation velocity.

Followings are typical applications for GaN HEMT

• Wireless Base Stations; Radio Frequency (RF) PowerTransistors
• High-Voltage Electronics; PowerTransmission Lines
• Wireless BroadbandAccess; High-Frequency PowerMMICs
• Mixed-Signal Integration; PowerConditioning
• Radar/Communication Links

Further Readings

• High Electron Mobility Transistors (HEMT)